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P Channel Enchancement Mode MOSFET -3.5A DESCRIPTION
ST3403
The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L 3
FEATURE -30V/-2.8A, RDS(ON) = 105m-ohm @VGS = -10V -30V/-2.5A, RDS(ON) = 115m-ohm @VGS = -4.5V -30V/-1.5A, RDS(ON) = 155m-ohm @VGS = -2.5V RDS(ON) =255m-ohm @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
D G
1
1.Gate 2.Source
S
2
3.Drain
3
A3YA
1 2
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page 1
P Channel Enchancement Mode MOSFET -3.5A
ST3403
ABSOLUTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150J ) TA=25J TA=70J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25J TA=70J Symbol VDSS VGSS ID IDM IS PD TJ TSTG Rc
JA
Typical -30 +/-12 -3.5 -2.8 -20 -1.4 1.25 0.81 150 -55/150 105
Unit V V A A A W J J J /W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page 2
P Channel Enchancement Mode MOSFET -3.5A
ST3403
ELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance RDS(on) V(BR)DSS VGS=0V,ID=-250uA VGS(th) IGSS IDSS ID(on) -30 -1.0 V V
VDS=VGS,ID=-250uA -0.4 VDS=0V,VGS=O 12V VDS=-24V,VGS=0V VDS=-24V,VGS=0V TJ=85J VDSU -5V,VGS=-4.5V VGS=-10V,ID=-2.8A VGS=-4.5V,ID=-2.5A VGS=-2.5V,ID=-1.5A VGS=-1.8V,ID=-1.0A VDS=-10V,ID=-2.8A IS=-1.2A,VGS=0V VDS=-15V,VGS=-4.5V IDY -2.0A VDS=-15V,VGS=0V F=1MHz
O 100 nA -1 -5 -4 uA A 0.09 0.105 0.100 0.115 [ 0.140 0.155 0.200 0.255 4 S -0.8 -1.2 5.8 0.8 1.5 380 55 40 6 3.9 40 15 V
Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time
gfs
VSD Qg Qgs Qgd Ciss Coss Crss
nC
pF
td(on) tr td(off) tf
VDD=-15V,RL=15[ VGEN=-10V,RG=3[ IDY -1.0A
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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P Channel Enchancement Mode MOSFET -3.5A SOT-23-3L PACKAGE OUTLINE
ST3403
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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N Channel Enchancement Mode MOSFET -3.5A TYPICAL CHARACTERISTICS
ST3403
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page 5
P Channel Enchancement Mode MOSFET -3.5A TYPICAL CHARACTERISTICS
ST3403
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page 6
N Channel Enchancement Mode MOSFET -3.5A TYPICAL CHARACTERISTICS
ST3403
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page 7

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